Metal Oxide Semiconductor Field Effect Transistor

文件：1.75121 Mbytes Page：15 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Metal Oxide Semiconductor Field Effect Transistor

文件：1.75121 Mbytes Page：15 Pages

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

650V CoolMOS E6 Power Transistor

Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resultin

Metall Oxide Semiconductor Field Effect Transistor

文件：1.17442 Mbytes Page：18 Pages