位置：首页 > IC中文资料第5069页 > IPP65R190E6
IPP65R190E6价格
参考价格：￥10.5155
型号：IPP65R190E6XKSA1 品牌：Infineon Technologies 备注：这里有IPP65R190E6多少钱，2025年最近7天走势，今日出价，今日竞价，IPP65R190E6批发/采购报价，IPP65R190E6行情走势销售排行榜，IPP65R190E6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPP65R190E6 | 650V CoolMOS??E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de | Infineon 英飞凌 |   | |
IPP65R190E6 | N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | |
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
650V CoolMOS??E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor • FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages, hard switching PWM stages and resonant s | ISC 无锡固电 | | ||
650V CoolMOS??E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de | Infineon 英飞凌 | |
IPP65R190E6产品属性
- 类型
描述
- 型号
IPP65R190E6
- 制造商
Infineon Technologies AG
- 功能描述
COOL MOS - Rail/Tube
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET N-CH 650V 20.2A TO220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
23+ |
PG-TO220-3 |
12700 |
买原装认准中赛美 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
4991 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
25+ |
TO220 |
32360 |
INFINEON/英飞凌全新特价IPP65R190E6即刻询购立享优惠#长期有货 |
|||
INFINEO |
1402+1644+ |
TO220 |
596 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEO |
21+ |
TO220 |
1638 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
Infineon/英飞凌 |
23+ |
PG-TO220-3 |
25630 |
原装正品 |
|||
Infineon/英飞凌 |
24+ |
PG-TO220-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-TO220-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
IPP65R190E6规格书下载地址
IPP65R190E6参数引脚图相关
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- irf630
- irf540n
- irf540
- ir2110
- ips面板
- IPS1011
- IPS042G
- IPS041L
- IPS032G
- IPS031S
- IPS031R
- IPS031G
- IPS031
- IPS024G
- IPS022G
- IPS021S
- IPS021L
- IPS021
- IPS0151
- IPRI6
- IPRI4
- IPRI2
- IPRI0
- IPRH2
- IPRH0
- IPP80N06S2-05
- IPP80N04S4-03
- IPP80N04S3-06
- IPP80N04S3-04
- IPP80N04S3-03
- IPP80N04S2L-03
- IPP80N03S4L-04
- IPP80N03S4L-03
- IPP77N06S2-12
- IPP70N10SL-16
- IPP70N10S3L-12
- IPP70N10S3-12
- IPP65R600E6
- IPP65R420CFD
- IPP65R420CF=FS1
- IPP65R380E6
- IPP65R310CFD
- IPP65R280E6
- IPP65R225C7XKSA1
- IPP65R190E6XKSA1
- IPP65R190CFD
- IPP65R190C6XKSA1
- IPP65R150CF=FS1
- IPP65R099C6XKSA1
- IPP65R095C7XKSA1
- IPP65R074C6XKSA1
- IPP65R045C7XKSA1
- IPP65R045C7
- IPP60R950C6
- IPP60R750E6
- IPP60R600P6
- IPP60R600E6XKSA1
- IPP60R600E6
- IPP60R600C6
- IPP60R520C6
- IPP60R450E6
- IPP60R385CP
- IPP60R380E6
- IPP60R380C6
- IPP60R299CPXKSA1
- IPM6220
- IPM300
- IPM-22W
- IPM-19
- IPM-17
- IPM-15
- IPM-12
- IPM-10
- IPM-08
- IPM-057
- IPLA-32
- IPL88
- IPL86
- IPL85
- IPL84
- IPL78
- IPL76
- IPL68
- IPL66
- IPL65
IPP65R190E6数据表相关新闻
IPP65R190CFD
进口代理
2023-12-7IPP65R110CFDA
IPP65R110CFDA
2023-8-22IPQC60R010S7XTMA1
IPQC60R010S7XTMA1
2023-7-4IPP65R110CFDA INFINEON/英飞凌 21+ TO-220
https://hfx03.114ic.com/
2022-2-19IPP65R600C6优势原装Infineon局道
IPP65R600C6 优势原装Infineon局道
2019-3-27IPS0151-完全保护的功率MOSFET开关
IPS0151/IPS0151S得到充分保护三端智能功率MOSFET，具有过电流，超温，防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。 特点 •在温度关机 •在当前的关机 •有源钳位
2012-11-14
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
