IPL65价格

参考价格:¥30.5263

型号:IPL65R130C7 品牌:Infineon Technologies 备注:这里有IPL65多少钱,2025年最近7天走势,今日出价,今日竞价,IPL65批发/采购报价,IPL65行情走势销售排行榜,IPL65报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPL65

Plinthe

文件:51.36 Kbytes Page:1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

Infineon

英飞凌

650V CoolMOS짧 CFD7 SJ Power Device

MOSFET 650V CoolMOSª CFD7 SJ Power Device The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficie

Infineon

英飞凌

650V CoolMOS짧 CFD7 SJ Power Device

The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficiency in resonant switching topologies, such

Infineon

英飞凌

650VCoolMOSªCFD7SJPowerDevice

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowerdensitysolutions •Outstandingli

Infineon

英飞凌

650VCoolMOSªCFD7SJPowerDevice

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowerdensitysolutions •Outstandingli

Infineon

英飞凌

650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg

Infineon

英飞凌

650V CoolMOS짧 CFD7 SJ Power Device

MOSFET 650V CoolMOSª CFD7 SJ Power Device The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficie

Infineon

英飞凌

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

Infineon

英飞凌

MOSFET 650V CoolMOS짧 CFD7 SJ Power Device

The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficiency in resonant switching topologies, such

Infineon

英飞凌

650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Q

Infineon

英飞凌

Increased MOSFET dv/dt ruggedness

文件:1.8509 Mbytes Page:15 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

集成快速体二极管的 650V CoolMOS ™ CFD7 超结 MOSFET 是谐振高功率拓扑的完美选择

Infineon

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Infineon

英飞凌

Increased MOSFET dv/dt ruggedness

文件:1.79978 Mbytes Page:15 Pages

Infineon

英飞凌

Reduced board space consumption

文件:1.66554 Mbytes Page:15 Pages

Infineon

英飞凌

Reduced board space consumption

文件:1.64986 Mbytes Page:15 Pages

Infineon

英飞凌

Increased MOSFET dv/dt ruggedness

文件:1.82242 Mbytes Page:15 Pages

Infineon

英飞凌

650V CoolMOS™ C6 Power Transistor

文件:1.37584 Mbytes Page:14 Pages

Infineon

英飞凌

650V CoolMOS™ C6 Power Transistor

文件:1.3907 Mbytes Page:14 Pages

Infineon

英飞凌

Reduced board space consumption

文件:1.65973 Mbytes Page:15 Pages

Infineon

英飞凌

Reduced board space consumption

文件:1.64275 Mbytes Page:15 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.84867 Mbytes Page:15 Pages

Infineon

英飞凌

Reduced board space consumption

文件:1.63309 Mbytes Page:15 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.85221 Mbytes Page:15 Pages

Infineon

英飞凌

650V CoolMOS™ C6 Power Transistor

文件:1.41896 Mbytes Page:14 Pages

Infineon

英飞凌

Reduced board space consumption

文件:1.64253 Mbytes Page:15 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.82139 Mbytes Page:15 Pages

Infineon

英飞凌

IPL65产品属性

  • 类型

    描述

  • 型号

    IPL65

  • 功能描述

    机架和机柜配件 IME PLINTH 600X500

  • RoHS

  • 制造商

    Bivar

  • 产品

    Rack Accessories

  • 颜色

    Black

更新时间:2025-11-23 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON TECHNOLOGIES AG
25+
SMD
918000
明嘉莱只做原装正品现货
Infineon(英飞凌)
24+
PG-VSON-4
22048
原厂可订货,技术支持,直接渠道。可签保供合同
Infineon/英飞凌
21+
PG-VSON-4
6820
只做原装,质量保证
Infineon/英飞凌
24+
PG-VSON-4
30000
原装正品公司现货,假一赔十!
INFINEON/英飞凌
24+
VSON-4
9000
只做原装正品 有挂有货 假一赔十
INFINEON
24+
VSON-4
5000
全新原装正品,现货销售
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon(英飞凌)
24+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询

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