CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

N-Channel 900-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applic

CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi