型号 功能描述 生产厂家 企业 LOGO 操作
IPI65R190CFD

Metal Oxide Semiconduvtor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

Infineon

英飞凌

IPI65R190CFD

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

Infineon

英飞凌

IPI65R190CFD

650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

Infineon

英飞凌

IPI65R190CFD

isc N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f

ISC

无锡固电

IPI65R190CFD

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Metal Oxide Semiconduvtor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

Infineon

英飞凌

650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

Infineon

英飞凌

20A竊?50V N-CHANNEL MOSFET

文件:450.41 Kbytes Page:6 Pages

KIA

可易亚半导体

IPI65R190CFD产品属性

  • 类型

    描述

  • 型号

    IPI65R190CFD

  • 制造商

    Infineon Technologies AG

  • 功能描述

    Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-262

  • 制造商

    Infineon Technologies AG

  • 功能描述

    COOL MOS - Rail/Tube

  • 制造商

    Infineon Technologies AG

  • 功能描述

    MOSFET N-CH 650V 17.5A TO262

更新时间:2025-12-11 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
4885
原装现货,当天可交货,原型号开票
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
Infineon/英飞凌
23+
PG-TO262-3
12700
买原装认准中赛美
INFINEON
23+
TO-262
4135
原厂原装正品
Infineon/英飞凌
24+
PG-TO262-3
25000
原装正品,假一赔十!
Infineon/英飞凌
21+
PG-TO262-3
6820
只做原装,质量保证
Infineon
24+
TO-262
8500
原厂原包原装公司现货,假一赔十,低价出售
Infineon(英飞凌)
24+
TO-262
8145
支持大陆交货,美金交易。原装现货库存。
INFINEON/英飞凌
24+
TO-262
47186
郑重承诺只做原装进口现货
Infineon/英飞凌
24+
PG-TO262-3
6000
全新原装深圳仓库现货有单必成

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