位置：首页 > IC中文资料第5142页 > IPI65R190CFD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI65R190CFD | MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPI65R190CFD | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPI65R190CFD | 650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPI65R190CFD | iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
20A竊?50VN-CHANNELMOSFET 文件：450.41 Kbytes Page：6 Pages | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 |  | |
IPI65R190CFD产品属性
- 类型
描述
- 型号
IPI65R190CFD
- 制造商
Infineon Technologies AG
- 功能描述
Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-262
- 制造商
Infineon Technologies AG
- 功能描述
COOL MOS - Rail/Tube
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET N-CH 650V 17.5A TO262
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
PG-TO262-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Infineon/英飞凌 |
21+ |
PG-TO262-3 |
13880 |
公司只售原装,支持实单 |
|||
INFINEON/英飞凌 |
24+ |
TO262 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
INFINEON/英飞凌 |
1425+ |
TO-262 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
22+ |
TO262 |
92901 |
||||
INF |
2022 |
TO-262 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
12700 |
买原装认准中赛美 |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
25630 |
原装正品 |
|||
INFINEON/英飞凌 |
21+ |
TO-262 |
14700 |
全新原装现货 |
|||
Infineon |
2023 |
6000 |
公司原装现货/支持实单 |
IPI65R190CFD芯片相关品牌
IPI65R190CFD规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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