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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI60R600CP | CoolMOSTMPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: •HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPI60R600CP | iscN-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
CoolMosPowerTransistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisdesignedfor: •Hards | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMosPowerTransistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisdesignedfor: •Hards | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPI60R600CP产品属性
- 类型
描述
- 型号
IPI60R600CP
- 功能描述
MOSFET N-CH 600V 6.1A TO-262
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
CoolMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
21+ |
TO2623 Long Leads I2Pak TO262A |
13880 |
公司只售原装,支持实单 |
|||
INFINEON/英飞凌 |
22+ |
TO-262 |
92342 |
||||
INFINEON/英飞凌 |
2022 |
TO-262 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
INFINEON |
2016+ |
TO-262 |
6528 |
房间原装进口现货假一赔十 |
|||
INFINEON/英飞凌 |
19+ |
TO-262 |
10000 |
只做原装只有原装假一罚百可开增值税票 |
|||
inf进口原 |
19+ |
TO-262 |
9860 |
一级代理 |
|||
INFINEON/英飞凌 |
TO-262 |
8628 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon Technologies |
23+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原装正品，支持实单 |
|||
INFINEON |
22+23+ |
TO-262 |
35457 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
22+ |
TO-262 |
34137 |
只做原装进口现货 |
IPI60R600CP芯片相关品牌
IPI60R600CP规格书下载地址
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IPI60R600CP数据表相关新闻
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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