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型号 功能描述 生产厂家 企业 LOGO 操作
IPI60R600CP

CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

INFINEON

英飞凌

IPI60R600CP

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPI60R600CP

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. ·Lowest figure of merit R on x Q g\n ·Ultra low gate charge\n ·Extreme dv/dt rate\n ·Ultra low R DS(on), ultra low gate charge, very fast switching\n ·V th 3 V, g fs very high, internal R g very low\n ·High current capability\n ·Significant reduction of conduction and switching losses\n ·High;

INFINEON

英飞凌

丝印代码:6R600P;CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

INFINEON

英飞凌

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

INFINEON

英飞凌

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

INFINEON

英飞凌

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

INFINEON

英飞凌

IPI60R600CP产品属性

  • 类型

    描述

  • VDS max:

    600.0V

  • RDS (on) max:

    600.0mΩ

  • Polarity :

    N

  • ID  max:

    6.1A

  • Ptot max:

    60.0W

  • IDpuls max:

    15.0A

  • VGS(th) min max:

    2.5V 3.5V

  • QG :

    21.0nC 

  • Rth :

    2.1K/W 

  • RthJC max:

    2.1K/W

  • RthJA max:

    62.0K/W

  • Operating Temperature min:

    -55.0°C 

更新时间:2026-8-2 19:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
25+23+
TO262
27820
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INFINEON
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SMD
100500
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INFINEON
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TO262
28888
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Infineon Technologies
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9000
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TO-262
8628
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92342
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11846
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CMOS/场效应半导体
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TO-251
69820
终端可以免费供样,支持BOM配单!

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