型号 功能描述 生产厂家 企业 LOGO 操作
IPI60R600CP

CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

Infineon

英飞凌

IPI60R600CP

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPI60R600CP

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

ISC

无锡固电

CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

Infineon

英飞凌

IPI60R600CP产品属性

  • 类型

    描述

  • 型号

    IPI60R600CP

  • 功能描述

    MOSFET N-CH 600V 6.1A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    CoolMOS™

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-22 11:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
25+23+
TO-262
35457
绝对原装正品全新进口深圳现货
INFINEON/英飞凌
2023+
TO-262
10000
全新原装正品,优势价格
INFINEON/英飞凌
23+
TO262
11220
英飞凌优势原装IC,高效BOM配单。
INFINEON
23+
TO-262
8000
专注配单,只做原装进口现货
CMOS/场效应半导体
23+
TO-251
69820
终端可以免费供样,支持BOM配单!
INFINEON/英飞凌
24+
TO-262
47186
郑重承诺只做原装进口现货
INFINEON
21+
TO262
10000
原装现货假一罚十
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
inf进口原
24+
TO-262
30980
原装现货/放心购买
INFINEON
22+
TO-262
8000
终端可免费供样,支持BOM配单

IPI60R600CP数据表相关新闻