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IPI600N25N3价格
参考价格：￥6.8326
型号：IPI600N25N3G 品牌：Infineon 备注：这里有IPI600N25N3多少钱，2025年最近7天走势，今日出价，今日竞价，IPI600N25N3批发/采购报价，IPI600N25N3行情走势销售排行榜，IPI600N25N3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI600N25N3 | iscN-ChannelMOSFETTransistor 文件：315.42 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
OptiMOSTM3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
OptiMOS3Power-Transistor 文件：737.83 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
OptiMOS3Power-Transistor 文件：737.83 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Highfrequencyswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤60mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOSTM3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
OptiMOS3Power-Transistor 文件：737.83 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
OptiMOS3Power-Transistor 文件：737.83 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
IPI600N25N3产品属性
- 类型
描述
- 型号
IPI600N25N3
- 功能描述
MOSFET N-Channel 250V Transistor N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
TO-262 |
880000 |
明嘉莱只做原装正品现货 |
|||
Infineon/英飞凌 |
21+ |
PG-TO262-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
23+ |
TO-262 |
25000 |
英飞凌MOS管全系列在售,终端可供样品 |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
12700 |
买原装认准中赛美 |
|||
Infineon/英飞凌 |
24+ |
PG-TO262-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
24+ |
PG-TO262-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
25630 |
原装正品 |
|||
Infineon/英飞凌 |
24+ |
PG-TO262-3 |
8000 |
只做原装，欢迎询价，量大价优 |
|||
INFINEON |
25+23+ |
TO-262 |
13366 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON |
TO-262 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
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IPI600N25N3规格书下载地址
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IPI600N25N3数据表相关新闻
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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