位置：首页 > IC中文资料第5081页 > IPI200N15N3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI200N15N3 | isc N-Channel MOSFET Transistor 文件：315.39 Kbytes Page：2 Pages | ISC 无锡固电 |   | |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) 文件：556.24 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：335.43 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：339.23 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) 文件：556.24 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) 文件：556.24 Kbytes Page：12 Pages | Infineon 英飞凌 | |
IPI200N15N3产品属性
- 类型
描述
- 型号
IPI200N15N3
- 功能描述
MOSFET OptiMOS 3 PWR TRANST 150V 50A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
11151 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
23+ |
TO-262 |
25000 |
英飞凌MOS管全系列在售,终端可供样品 |
|||
INFINEON |
23+ |
TO-262 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
TO-262 |
6112 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
INFINEON/英飞凌 |
23+ |
TO-263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INFINEON/英飞凌 |
23+ |
TO-262 |
11151 |
||||
INFINEON |
23+ |
8000 |
专注配单,只做原装进口现货 |
||||
INFINEON |
23+ |
7000 |
|||||
INFINEON/英飞凌 |
24+ |
TO-262 |
9000 |
只做原装，欢迎询价，量大价优 |
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IPI200N15N3规格书下载地址
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2018-12-30
DdatasheetPDF页码索引
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