isc N-Channel MOSFET Transistor

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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC for target application • Halogen-free according to IEC6124

N 沟道功率 MOSFET

OptiMOS 3 Power-Transistor

文件：739.46 Kbytes Page：11 Pages

OptiMOSTM3 Power-Transistor

文件：696.05 Kbytes Page：11 Pages

OptiMOSTM 3 Linear FET, 200 V

Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC6

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-Channel MOSFET Transistor

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