位置：首页 > IC中文资料第6469页 > IPI057N08N3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI057N08N3 | OptiMOS 3 Power-Transistor Features N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr | Infineon 英飞凌 |   | |
OptiMOS 3 Power-Transistor Features N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr | Infineon 英飞凌 | | ||
OptiMOS 3 Power-Transistor Features N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr | Infineon 英飞凌 | | ||
OptiMOS3 Power-Transistor 文件：1.02844 Mbytes Page：11 Pages | Infineon 英飞凌 | | ||
OptiMOS3 Power-Transistor 文件：1.02844 Mbytes Page：11 Pages | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applicatio | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor 文件：300.92 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：338.63 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：300.92 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
OptiMOS(TM)3 Power-Transistor 文件：286.02 Kbytes Page：9 Pages | Infineon 英飞凌 | |
IPI057N08N3产品属性
- 类型
描述
- 型号
IPI057N08N3
- 功能描述
MOSFET OptiMOS 3 PWR TRANS 80V 80A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
22600 |
原装现货,当天可交货,原型号开票 |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
25+23+ |
TO-262 |
14777 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON |
24+ |
TO-262 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON |
24+ |
I2PAK(TO-262) |
8866 |
||||
INFINEON |
23+ |
7000 |
|||||
Infineon(英飞凌) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
INFINEON |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
INFINEON |
09+PBF |
TO-262 |
19500 |
现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-262 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
IPI057N08N3芯片相关品牌
IPI057N08N3规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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