isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

效率和散热性能的基准

800V CoolMOS짧 P7 Power Transistor

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800V CoolMOSª P7 Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Fully optimized portfolio

800V CoolMOS짧 P7 Power Transistor

800V CoolMOSª P7 Power Transistor Potential applications    Recommended for hard and soft switching flyback topologies for LED    Lighting, low power Chargers and Adapters, Audio, AUX power and    Industrial power. Also suitable for PFC stage in Consumer applications    andSolar.

800V CoolMOS짧 P7 Power Transistor

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