位置:首页 > IC中文资料 > IPD20N06LA
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 | |||
60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | |||
20A mps,60 Volts N-CHANNEL MOSFET 文件:193.72 Kbytes Page:2 Pages | CHONGQING 平伟实业 | |||
Fast Switching 文件:67.37 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-Channel 60-V (D-S) MOSFET 文件:897.38 Kbytes Page:6 Pages | VBSEMI 微碧半导体 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
TO-252 |
45000 |
FAIRCHILD/仙童全新现货20N06即刻询购立享优惠#长期有排单订 |
|||
ON |
24+ |
TO252 |
30000 |
原装正品公司现货,假一赔十! |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ON |
24+ |
TO252 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
UMW 友台 |
23+ |
TO-252 |
30000 |
原装正品,实单请联系 |
|||
GT/YGMOS |
23+ |
TO-252 |
90000 |
||||
ST |
25+ |
原厂原封 |
16900 |
原装,请咨询 |
|||
ON/安森美 |
23+ |
SOT252 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
IPD20N06LA规格书下载地址
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2018-12-30
DdatasheetPDF页码索引
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