| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | |||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM80N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l | ADV 爱德微 | |||
N-Channel 30-V (D-S) MOSFET 文件:1.00146 Mbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
Fast Switching Characteristic 文件:82.72 Kbytes Page:7 Pages | A-POWER 富鼎先进电子 | |||
Fast Switching Characteristic 文件:82.72 Kbytes Page:7 Pages | A-POWER 富鼎先进电子 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
34 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
AP |
24+ |
TO263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
- |
25+ |
DDPAK-14 |
65428 |
百分百原装现货 实单必成 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
2450+ |
TO263 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SIEMENS |
00+ |
ZIP-3 |
6 |
原装现货海量库存欢迎咨询 |
|||
INFINEON |
2025+ |
TO263 |
3645 |
全新原厂原装产品、公司现货销售 |
|||
25+23+ |
DDPAK-14 |
8648 |
绝对原装正品全新进口深圳现货 |
||||
N |
25+ |
TO-TO-220 |
23188 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
IPB80N03L规格书下载地址
IPB80N03L参数引脚图相关
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IPB80N03L数据表相关新闻
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DdatasheetPDF页码索引
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