型号 功能描述 生产厂家 企业 LOGO 操作
IPB65R280E6

650V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

Infineon

英飞凌

IPB65R280E6

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

IPB65R280E6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.28Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤280mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

650V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

Infineon

英飞凌

650V CoolMOS E6 Power Transistor

文件:1.89068 Mbytes Page:17 Pages

Infineon

英飞凌

IPB65R280E6产品属性

  • 类型

    描述

  • 型号

    IPB65R280E6

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-21 10:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-263
8498
支持大陆交货,美金交易。原装现货库存。
INFINEON
25+23+
New
31893
绝对原装正品现货,全新深圳原装进口现货
INFINEON/英飞凌
24+
TO263
9600
原装现货,优势供应,支持实单!
INFINEON
21+
TO263
10000
原装现货假一罚十
INFINEON/英飞凌
23+
TO263
11220
英飞凌优势原装IC,高效BOM配单。
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon
22+
D2PAK(TO-263)
6000
十年配单,只做原装
INFINEON/英飞凌
2023+
TO263
6893
十五年行业诚信经营,专注全新正品
INFINE0N
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
INFINEON/英飞凌
21+
TO263
1709

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