650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies Features • Increased MOSFET dv/dt ruggedness • Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

isc N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.225Ω • Enhancement mode • Fast Switching Speed

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.225Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.225Ω • Enhancement mode • Fast Switching Speed

Isc N-Channel MOSFET Transistor

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Metal Oxide Semiconductor Field Effect Transistor

文件：1.78369 Mbytes Page：15 Pages