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IPB65R190C6价格
参考价格：￥9.6050
型号：IPB65R190C6 品牌：Infineon 备注：这里有IPB65R190C6多少钱，2025年最近7天走势，今日出价，今日竞价，IPB65R190C6批发/采购报价，IPB65R190C6行情走势销售排行榜，IPB65R190C6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB65R190C6 | 650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de | Infineon 英飞凌 |   | |
IPB65R190C6 | Extremely low losses due to very low FOM Rdson*Qg and Eoss Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de | Infineon 英飞凌 | | |
IPB65R190C6 | Isc N-Channel MOSFET Transistor 文件：189.26 Kbytes Page：2 Pages | ISC 无锡固电 | | |
N-Channel MOSFET Transistor • DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Extremely low losses due to very low FOM Rdson*Qg and Eoss Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de | Infineon 英飞凌 | | ||
650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor 文件：338.41 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor 文件：261.019 Kbytes Page：2 Pages | ISC 无锡固电 | |
IPB65R190C6产品属性
- 类型
描述
- 型号
IPB65R190C6
- 功能描述
MOSFET 650V CoolMOS C6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
22048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
23+ |
TO263 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
INFINEON |
23+ |
TSSOP |
7300 |
专注配单,只做原装进口现货 |
|||
INFINEON/英飞凌 |
2450+ |
TO-263 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON/英飞凌 |
24+ |
TO263 |
42000 |
只做原装进口现货 |
|||
INFINEON/英飞凌 |
2223+ |
TO263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
INFINEON |
24+ |
TO263 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
24+ |
TO263 |
5 |
只做原厂渠道 可追溯货源 |
|||
Infineon Technologies |
21+ |
D2PAK(TO-263AB) |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
IPB65R190C6规格书下载地址
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DdatasheetPDF页码索引
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