Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platfor Efficiency \n • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G\n Ease-of-use \n • Integrated ESD diode from 180mN and above R DS(on)s\n• Integrated gate resistor R G\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial ;

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

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丝印代码：60R180P7；600V CoolMOS짧 P7 Power Transistor

文件：1.13455 Mbytes Page：14 Pages

丝印代码：60R180P7；600V CoolMOS짧 P7 Power Transistor

MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P

N-Channel MOSFET Transistor

文件：338.86 Kbytes Page：2 Pages

丝印代码：60S180P7；600V CoolMOS짧 P7 Power Transistor

文件：1.07967 Mbytes Page：14 Pages

丝印代码：60R180P7；600V CoolMOS짧 P7 Power Transistor

文件：1.74833 Mbytes Page：14 Pages

丝印代码：60R180P7；600V CoolMOS??P7 Power Transistor

文件：1.11453 Mbytes Page：14 Pages