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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB60R105CFD7 | 600V CoolMOSª CFD7 Power Transistor Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages | Infineon 英飞凌 |   | |
MOSFET 600V CoolMOSª CFD7 Power Transistor Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages | Infineon 英飞凌 | | ||
600V CoolMOSª CFD7 Power Transistor Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages | Infineon 英飞凌 | | ||
600V CoolMOS??CFD7 Power Transistor 文件：1.045109 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
600V CoolMOS짧 CFD7 Power Transistor 文件：1.27127 Mbytes Page：14 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
PG-TO263-3 |
7000 |
||||
INFINEON |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
Infineon/英飞凌 |
23+ |
PG-TO263 |
12700 |
买原装认准中赛美 |
|||
Infineon/英飞凌 |
23+ |
PG-TO263 |
6000 |
我们只做原装正品,支持检测。 |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
INFINE0N |
21+ |
PG-TO263-3 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
Infineon/英飞凌 |
25 |
PG-TO263 |
6000 |
原装正品 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
150 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INENOI |
21+ |
SOT263 |
12500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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IPB60R105CFD7规格书下载地址
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DdatasheetPDF页码索引
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