Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

CoolMOS ™ C7 超结 MOSFET 在 PFC 和 LLC 拓扑中提供一流的性能

600V CoolMOS™ C7 超级结（SJ）MOSFET 系列比 CoolMOS™ CP 系列可减少大约 50% 的关断损耗（E oss），在 PFC、TTF 及其他硬开关拓扑结构中可提供卓越的性能。\n CoolMOS™ C7 提供的更高效率有益于效率和总体拥有成本（TCO）应用，如超数据中心和高效率电信整流器（>96%）。在 PFC 拓扑结构中，可获得 0.3% - 0.7% 的增益，在LLC拓扑结构中，可获得 0.1% 的增益。例如，如果是 2.5kW 的服务器 PSU，在 TO-247 4 针套件内采用 600V CoolMOS™ • 开关损耗参数减少，如 Q G、C oss、E oss\n• 最佳品质因数 Q G*R DS(on)\n• 开关频率增加\n• 世界上最佳的 R (on)*A\n• 坚固体二极管\n\n优势:\n• 可在不损失效率的情况下增加开关频率\n• 为轻负载和满载效率测量显示关键参数\n• 开关频率加倍会将磁性元件的尺寸减半\n• 对于相同的 R DS(on)，包装更小\n• 可用于硬开关和软开关拓扑结构中的更多位置;

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ CP 是英飞凌第五个 CoolMOS™ 系列产品，专门设计用于 ATX、笔记本适配器 PDP 和 LCD 电视的软硬开关拓扑、CCM PFC 以及 PWM。\n   • 极低的 R on x Q g 品质因数\n• 极低的栅极电荷\n• 极端 dv/dt 额定值\n• 极低的 R DS(on)，超低的栅极电压，极快速开关\n• V th 为 3 V，g fs 极高，内部 R g 非常低\n• 高电流能力\n• 显著减少传导和开关损耗\n• 高功率密度和效率，实现更高功率转换系统\n• 出色性价/性能比\n\n优势:;

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

CoolMOS Power Transistor

Features • Worldwide best Rds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications

20V-650V汽车级MOSFET

• Worldwide best RDS(on) in TO-220 package\n • Ultra low gate charge\n • Extreme dv/dt rated\n • High peak current capability\n • Automotive AEC Q101 qualified\n • Green package (RoHS compliant)\n\n优势:;

Metal Oxide Semiconductor Field Effect Transistor

文件：987.87 Kbytes Page：18 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：987.87 Kbytes Page：18 Pages

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：189.59 Kbytes Page：2 Pages

丝印代码：60C7099；600V CoolMOS짧 C7 Power Transistor

文件：1.21091 Mbytes Page：14 Pages

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

CoolMOSTM Power Transistor

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Cool MOS Power Transistor Feature new revolutionary high voltage technology

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