CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free mold compound • Qualified for industrial grade applications according to JEDEC1) CoolMOS CP is designed for: • Hard &

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free mold compound • Qualified for industrial grade applications according to JEDEC1) CoolMOS CP is designed for: • Hard &

CoolMOS Power Transistor

Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free mold compound • Qualified for industrial grade applications according to JEDEC1) CoolMOS CP is designed for: • Hard &

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free mold compound • Qualified for industrial grade applications according to JEDEC1)

CoolMOSTM Power Transistor

Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: • Hard- & Softswitching SMPS topologies •

OptiMOS3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen Free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 21A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 53mΩ(Max)@VGS= 10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

OptiMOS짰2 Power-Transistor

文件：710.62 Kbytes Page：13 Pages

OptiMOS2 Power-Transistor

文件：908.49 Kbytes Page：12 Pages

OptiMOS-T Power-Transistor

文件：192.37 Kbytes Page：9 Pages

100 V、N 沟道、15.4 mΩ（最大值）、汽车 MOSFET、D2PAK、OptiMOS ™ -T

包装：管件 描述：MOSFET N-CH 100V 70A TO263-3 分立半导体产品 晶体管 - FET，MOSFET - 单个

120 V、N 沟道、15.4 mΩ（最大值）、汽车 MOSFET、D2PAK、OptiMOS ™ -T

OptiMOS짰-T Power-Transistor

文件：410.27 Kbytes Page：9 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Isc N-Channel MOSFET Transistor

文件：188.86 Kbytes Page：2 Pages

N-channel, normal level

文件：967.66 Kbytes Page：12 Pages

N-channel, normal level

文件：967.66 Kbytes Page：12 Pages