丝印代码：330P10NM；OpriMOS power-Transistor,-100V

Fratures *P-channel *100 avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHs compliant *Halogen-free according to IEC61249-2-21

OptiMOS ™ P 沟道 MOSFET 100V，采用 D²PAK 封装

OpriMOS power-Transistor,-100V

Fratures *P-channel *100% avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHs compliant *Halogen-free according to IEC61249-2-21

丝印代码：330P10NM；OptiMOS Power-Transistor,-100V

Features *P-channel *100 avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

P-Channel MOSFET

FEATURES · Drain Current -ID= -62A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 33mΩ(Max)@VGS= -10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

Standard Size Toggle Switch

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