OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

OptiMOSTM3 Power-Transistor Features N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

OptiMOSTM3 Power-Transistor

文件：425.21 Kbytes Page：11 Pages

OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

N-Channel MOSFET Transistor

文件：335.94 Kbytes Page：2 Pages

N-Channel MOSFET Transistor

文件：338.66 Kbytes Page：2 Pages