Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

文件：556.24 Kbytes Page：12 Pages

N 沟道功率 MOSFET

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

文件：556.24 Kbytes Page：12 Pages

N-channel, normal level

文件：999.3 Kbytes Page：12 Pages

N-channel, normal level

文件：999.3 Kbytes Page：12 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

isc N-Channel MOSFET Transistor

文件：315.39 Kbytes Page：2 Pages