位置：首页 > IC中文资料第9684页 > IPB120N06NGXT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
OptiMOS Power-Transistor 文件：743.11 Kbytes Page：10 Pages | Infineon 英飞凌 |   | ||
Silicon N-Channel Power MOSFET General Description： CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | CRMICRO 华润微电子 | | ||
60V N-Ch Power MOSFET Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in T | HUNTECK 恒泰柯半导体 | | ||
N-Channel Enhancement Mode Power Mosfet 文件：3.99502 Mbytes Page：7 Pages | FOSTER 福斯特半导体 | | ||
60V N-Channel Trench MOSFET 文件：592.88 Kbytes Page：7 Pages | SEMIHOW | |
IPB120N06NGXT产品属性
- 类型
描述
- 型号
IPB120N06NGXT
- 制造商
Infineon Technologies AG
- 功能描述
Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) TO-263
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
TO-263 |
5000 |
全现原装公司现货 |
|||
infineon |
1709+ |
to-263/d2 |
32500 |
普通 |
|||
Infineon/英飞凌 |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
INFINEON/英飞凌 |
23+ |
TO-263 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
INFINEON/英飞凌 |
17+ |
D2PAK(TO-263) |
31518 |
原装正品 可含税交易 |
|||
Infineon(英飞凌) |
21+ |
TO-263 |
1000 |
原装现货,假一罚十 |
|||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
3500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON/英飞凌 |
23+ |
SOT263 |
50000 |
全新原装正品现货,支持订货 |
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IPB120N06NGXT规格书下载地址
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DdatasheetPDF页码索引
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