丝印代码：04CN10N；OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：244.06 Kbytes Page：2 Pages

丝印代码：04CN10N；OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

丝印代码：04CN10N；OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

isc N-Channel MOSFET Transistor

文件：305.33 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：338.19 Kbytes Page：2 Pages