Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom    and UPS.

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicatio

500V-900V CoolMOS™ N-Channel Power MOSFET

Metal Oxide Semiconductor Field Effect Transistor

文件：2.85536 Mbytes Page：19 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：2.85536 Mbytes Page：19 Pages

600V CoolMOS짧 P7 Power Transistor

文件：881.24 Kbytes Page：14 Pages

Isc N-Channel MOSFET Transistor

文件：260.899 Kbytes Page：2 Pages

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

优化的超结 MOSFET，兼具高能效和易用性

600V CoolMOS짧 P7 Power Transistor

文件：1.06554 Mbytes Page：14 Pages

CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation