Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom    and UPS.

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicatio

500V-900V CoolMOS™ N-Channel Power MOSFET

英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。 • 减少栅极电荷 (Qg)\n• 更高的 Vth\n• 体二极管耐久性良好\n• 经过优化的集成 Rg\n• dv/dt 从 50V/ns\n• 提高CoolMOS™ 的质量得益于英飞凌在超结技术领域拥有超过 12 年的制造经验\n\n优势:\n• 提高了效率，特别是在轻载条件下\n• 具备提前关闭功能，可提高软开关应用效率\n• 适用于硬开关和软开关拓扑\n• 优化了效率与易用性以及对开关行为的良好控制性之间的平衡\n• 坚固性高，效率更高\n• 出色的质量和可靠性;

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensur Efficiency\n • 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG\nEase-of-use\n • Integrated ESD diode from 180mN and above RDS(on)s\n• Integrated gate resistor RG\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial grade pa;

优化的超结 MOSFET，兼具高能效和易用性

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensur Efficiency\n • 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG\nEase-of-use\n • Integrated ESD diode from 180mN and above RDS(on)s\n• Integrated gate resistor RG\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial grade pa;

Metal Oxide Semiconductor Field Effect Transistor

文件：2.85536 Mbytes Page：19 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：2.85536 Mbytes Page：19 Pages

丝印代码：60R600P7；600V CoolMOS짧 P7 Power Transistor

文件：881.24 Kbytes Page：14 Pages

Isc N-Channel MOSFET Transistor

文件：260.899 Kbytes Page：2 Pages

丝印代码：60S600P7；600V CoolMOS짧 P7 Power Transistor

文件：1.06554 Mbytes Page：14 Pages

丝印代码：6R600P；CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s