Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS™ P6 series combines theexperience of the leading SJ MOSFET supplier with high class innovation.The offered device

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

500V-900V CoolMOS™ N-Channel Power MOSFET

Metal Oxide Semiconductor Field Effect Transistor

文件：2.88247 Mbytes Page：19 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：2.88247 Mbytes Page：19 Pages

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.38Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust de