丝印代码：60R160P7；600V CoolMOSª P7 Power Device

Features • Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Excellent ESD robustness >2kV (HBM) for all products • Better RDS(on)/package products compared to competition enabled by a

优化的超结 MOSFET，兼具高能效和易用性

丝印代码：60R160P7；600V CoolMOSª P7 Power Transistor

Features • Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Excellent ESD robustness >2kV (HBM) for all products • Better RDS(on)/package products compared to competition enabled by a

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12.5A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)