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型号	功能描述	生产厂家企业	LOGO
INA819	INA851 Precision, Low-Noise, Fully Differential Output Instrumentation Amplifier With Attenuating Gain and Output Clamping 1 Features • Gain programmable from G = 0.2 to 10,000 by using external resistor • Fully differential outputs with integrated clamping • Low offset voltage: 10 μV (typ), 35 μV (max) • Low offset drift: 0.1 μV/°C (typ), 0.3 μV/°C (max) • Low input bias current: 5 nA (typ) • Input stage noise	TI 德州仪器	TI
INA819	PGA849 Low-Noise, Wide-Bandwidth, Precision Programmable Gain Instrumentation Amplifier 1 Features • Differential to single-ended conversion • Eight pin-programmable binary gains – G (V/V) = ⅛, ¼, ½, 1, 2, 4, 8, and 16 • Low gain error drift: ±2ppm/°C (maximum) • Faster signal processing: – Wide bandwidth: 10MHz at all gains – High slew rate: 35V/μs at G ≥ ½ V/V – Settling ti	TI 德州仪器	TI
INA819	INA630 Precision, 126dB CMRR, Indirect Current Feedback Instrumentation Amplifier 1 Features • Optimized for cost and size sensitive applications • Super-beta bipolar precision: – High common-mode rejection: 126dB (minimum) for G = 20V/V to 1000V/V – Low offset voltage: 50μV (typical), 350μV (maximum) – Low offset voltage drift: 0.5μV/ºC (typical), 2μV/°C (maximum) – L	TI 德州仪器	TI
INA819	PGA848 Low-Noise, Wide-Bandwidth, Scope Gain, Single-Ended Output, Programmable Gain Instrumentation Amplifier 1 Features • Differential to single-ended conversion • Eight pin-programmable decade (scope) gains – G (V/V) = ½, 1, 2, 5, 10, 20, 50, and 100 • Low gain error drift: ±2ppm/°C (maximum) • Faster signal processing: – Wide bandwidth: 6.2MHz (G	TI 德州仪器	TI
INA819	INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier 1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie	TI 德州仪器	TI
INA819	INA630 Precision, 126dB CMRR, Indirect Current Feedback Instrumentation Amplifier 1 Features • Optimized for cost and size sensitive applications • Super-beta bipolar precision: – High common-mode rejection: 126dB (minimum) for G = 20V/V to 1000V/V – Low offset voltage: 60μV (typical), 350μV (maximum) – Low offset voltage drift: 0.7μV/°C (typical), 2μV/°C (maximum) – L	TI 德州仪器	TI
INA819	INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819	INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m	TI 德州仪器	TI
INA819	INA849 Ultra-Low-Noise (1 nV/√Hz), High-Bandwidth, Instrumentation Amplifier 1 Features • Ultra-low noise: 1-nV/√Hz input voltage noise (typical) • Precision super-beta input performance: – Low offset voltage: 35 μV (maximum) – Low offset voltage drift: 0.4 μV/°C (maximum) – Low input bias current: 20 nA (maximum) – Low gain drift: 5 ppm/°C for G = 1 (maximum) • Ba	TI 德州仪器	TI
INA819	2MHz、35μV 失调电压、8nV/√Hz 噪声、350µA 功耗、精密（增益引脚 2、3）仪表放大器	TI 德州仪器	TI
INA819	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819	INA849 Ultra-Low-Noise (1 nV/?숰z), High-Bandwidth, Instrumentation Amplifier 文件：3.21241 Mbytes Page：36 Pages	TI 德州仪器	TI
INA819	INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.32222 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819	35-關V Offset, 8-nV/?숰z Noise, Low-Power Precision Instrumentation Amplifier 文件：1.69297 Mbytes Page：43 Pages	TI 德州仪器	TI
INA819	INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.5537 Mbytes Page：48 Pages	TI 德州仪器	TI
INA819	INA597 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.38368 Mbytes Page：47 Pages	TI 德州仪器	TI
INA819	INA823 Precision, Low-Power, Wide-Supply (2.7-V to 36-V) Instrumentation Amplifier 文件：3.17466 Mbytes Page：33 Pages	TI 德州仪器	TI
INA819	INA851 Precision, Low-Noise, Fully Differential Output Instrumentation Amplifier With Optional Attenuating Gain 文件：1.46741 Mbytes Page：28 Pages	TI 德州仪器	TI
INA819	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819	INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：2.80737 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819_V01	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819ID	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819ID.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDGKR	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDGKR.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDGKT	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDGKT.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDR	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDR.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGR	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGR.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGT	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGT.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGTG4	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGTG4.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819_19	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819_V01	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819ID	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819ID	35-關V Offset, 8-nV/?숰z Noise, Low-Power Precision Instrumentation Amplifier 文件：1.69297 Mbytes Page：43 Pages	TI 德州仪器	TI
INA819ID	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819IDGKR	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819IDGKR	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819IDGKT	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819IDGKT	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819IDR	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819IDR	35-關V Offset, 8-nV/?숰z Noise, Low-Power Precision Instrumentation Amplifier 文件：1.69297 Mbytes Page：43 Pages	TI 德州仪器	TI
INA819IDR	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819IDRGR	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819IDRGT	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
819B	Surface Mount Zener Diodes Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package	KEXIN 科信电子	KEXIN
ADG819	0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8	AD 亚德诺	AD
819	TERMINAL STRIP 文件：181.44 Kbytes Page：1 Pages	KEYSTONE Keystone Electronics Corp.	KEYSTONE
ADG819	Tape and Reel Packaging 文件：395.36 Kbytes Page：6 Pages	AD 亚德诺	AD
ADG819	Tape and Reel Packaging 文件：395.36 Kbytes Page：6 Pages	AD 亚德诺	AD

INA819供应商更多...

更新时间：2025-12-26 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	INA819IDRGR	TI(德州仪器)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市威雅利发展有限公司	INA819IDGKR	德州仪器/TI		VSSOP8	125	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市科恒伟业电子有限公司	INA819IDR	TI	24+	SOIC	6850	只做原装正品现货或订货假一赔十!	询价
深圳市昂芯微科技有限公司	INA819ID	TI	23+	N/A	560	原厂原装	询价
深圳市正纳电子有限公司	INA819IDR	TI(德州仪器)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市煦洪科技有限公司	INA819IDGKR	TI	25+	VSSOP-8	18000	原厂授权一级代理，专注军工、汽车、医疗、工业、新能源、电力！	询价
深圳市中飞凌科技有限公司	INA819IDR	TI(德州仪器)	26+	N/A	360000	只有原装可配单	询价
讯运(深圳/上海)电子有限公司	INA819IDR	TI(德州仪器)	2021+	SOIC-8	499		询价
深圳市高捷芯城科技有限公司	INA819IDGKT	TI(德州仪器)	24+	VSSOP-8	7969	支持大陆交货,美金交易。原装现货库存。	询价
深圳市中联芯电子有限公司	INA819IDR	TI	24+	8-SOIC	9000	只做原装正品有挂有货假一赔十	询价

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INA333AIDGKR
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进口代理
2023-9-6
INA827AIDGK
INA827AIDGK 进口原装，公司现货，深圳可送货
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2022-4-21
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2021-9-18

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INA819供应商更多...

INA819芯片相关品牌

INA819规格书下载地址

INA819参数引脚图相关

INA819数据表相关新闻

INA333AIDGKR

INA333AIDGK

INA827AIDGK

INA826AIDRGT

INA849DR

INA333AIDGKR

DdatasheetPDF页码索引