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型号	功能描述	生产厂家企业	LOGO
INA819ID	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819ID	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819ID	35-關V Offset, 8-nV/?숰z Noise, Low-Power Precision Instrumentation Amplifier 文件：1.69297 Mbytes Page：43 Pages	TI 德州仪器	TI
INA819ID	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819ID.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDGKR	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDGKR.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDGKT	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDGKT.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDR	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDR.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGR	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGR.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGT	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGT.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGTG4	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDRGTG4.B	INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier 1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min	TI 德州仪器	TI
INA819IDGKR	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819IDGKR	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819IDGKT	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819IDGKT	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819IDR	35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：1.87616 Mbytes Page：44 Pages	TI 德州仪器	TI
INA819IDR	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819IDR	35-關V Offset, 8-nV/?숰z Noise, Low-Power Precision Instrumentation Amplifier 文件：1.69297 Mbytes Page：43 Pages	TI 德州仪器	TI
INA819IDRGR	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
INA819IDRGT	INA819 35-關V Offset, 8-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier 文件：2.2706 Mbytes Page：45 Pages	TI 德州仪器	TI
819B	Surface Mount Zener Diodes Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package	KEXIN 科信电子	KEXIN
ADG819	0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8	AD 亚德诺	AD
819	TERMINAL STRIP 文件：181.44 Kbytes Page：1 Pages	KEYSTONE Keystone Electronics Corp.	KEYSTONE
ADG819	Tape and Reel Packaging 文件：395.36 Kbytes Page：6 Pages	AD 亚德诺	AD
ADG819	Tape and Reel Packaging 文件：395.36 Kbytes Page：6 Pages	AD 亚德诺	AD

INA819ID供应商更多...

更新时间：2025-12-31 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	INA819IDRGR	TI(德州仪器)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市威雅利发展有限公司	INA819IDGKR	德州仪器/TI		VSSOP8	125	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市联世界科技有限公司	INA819IDR	TI(德州仪器)	24+/25+		10000	原装正品现货库存价优	询价
深圳市正纳电子有限公司	INA819IDR	TI(德州仪器)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市科恒伟业电子有限公司	INA819IDR	TI	24+	SOIC	6850	只做原装正品现货或订货假一赔十!	询价
深圳市河锋鑫科技有限公司	INA819IDR	TI(德州仪器)	2021+		8000	原装现货，欢迎询价	询价
深圳市腾亿芯科技有限公司	INA819IDGKR	TI(德州仪器)	25+	N/A	6000	原装，请咨询	询价
深圳市羿芯诚电子有限公司	INA819IDR	TI/德州仪器	24+	8-SOIC	2500	卖!卖!卖!	询价
柒号芯城电子商务(深圳)有限公司	INA819IDGKR	TI	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市高捷芯城科技有限公司	INA819IDGKT	TI(德州仪器)	24+	VSSOP-8	7969	支持大陆交货,美金交易。原装现货库存。	询价

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INA819ID供应商更多...

INA819ID芯片相关品牌

INA819ID规格书下载地址

INA819ID参数引脚图相关

INA819ID数据表相关新闻

INA333AIDGKR

INA333AIDGK

INA827AIDGK

INA826AIDRGT

INA849DR

INA333AIDGKR

DdatasheetPDF页码索引