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位置：首页 > IC中文资料 > INA592

型号 功能描述 生产厂家 企业 LOGO 操作
INA592

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592

高精密（40µV 失调电压）、2MHz、88dB CMRR、低功耗、e-trim™ 差分放大器

TI

德州仪器

INA592

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.33177 Mbytes Page：45 Pages

TI

德州仪器

INA592

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.32222 Mbytes Page：45 Pages

TI

德州仪器

INA592

High-Precision, Wide-Bandwidth e-trim Difference Amplifier

文件：442.86 Kbytes Page：20 Pages

TI

德州仪器

INA592

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.5537 Mbytes Page：48 Pages

TI

德州仪器

INA592

INA597 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.38368 Mbytes Page：47 Pages

TI

德州仪器

INA592

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：2.80737 Mbytes Page：44 Pages

TI

德州仪器

INA592IDGKR

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDGKR.B

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDGKT

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDGKT.B

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDR

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDR.B

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDRCR

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDRCR.B

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDRCT

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDRCT.B

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDRCTG4

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDRCTG4.B

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDT

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592IDT.B

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

TI

德州仪器

INA592_V01

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：2.80737 Mbytes Page：44 Pages

TI

德州仪器

INA592_V02

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.33177 Mbytes Page：45 Pages

TI

德州仪器

INA592_V03

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.32222 Mbytes Page：45 Pages

TI

德州仪器

INA592_V04

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.5537 Mbytes Page：48 Pages

TI

德州仪器

INA592ID

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：2.80737 Mbytes Page：44 Pages

TI

德州仪器

INA592ID

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.33177 Mbytes Page：45 Pages

TI

德州仪器

INA592IDGKR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.33177 Mbytes Page：45 Pages

TI

德州仪器

INA592IDGKR

High-Precision, Wide-Bandwidth e-trim Difference Amplifier

文件：442.86 Kbytes Page：20 Pages

TI

德州仪器

INA592IDGKR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.32222 Mbytes Page：45 Pages

TI

德州仪器

INA592IDGKR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：2.80737 Mbytes Page：44 Pages

TI

德州仪器

INA592IDGKR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.5537 Mbytes Page：48 Pages

TI

德州仪器

INA592IDGKT

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.5537 Mbytes Page：48 Pages

TI

德州仪器

INA592IDGKT

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.32222 Mbytes Page：45 Pages

TI

德州仪器

INA592IDGKT

High-Precision, Wide-Bandwidth e-trim Difference Amplifier

文件：442.86 Kbytes Page：20 Pages

TI

德州仪器

INA592IDGKT

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.33177 Mbytes Page：45 Pages

TI

德州仪器

INA592IDGKT

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：2.80737 Mbytes Page：44 Pages

TI

德州仪器

INA592IDR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：2.80737 Mbytes Page：44 Pages

TI

德州仪器

INA592IDR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.33177 Mbytes Page：45 Pages

TI

德州仪器

INA592IDR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.32222 Mbytes Page：45 Pages

TI

德州仪器

INA592IDR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.5537 Mbytes Page：48 Pages

TI

德州仪器

INA592IDRCR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.5537 Mbytes Page：48 Pages

TI

德州仪器

INA592IDRCR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.32222 Mbytes Page：45 Pages

TI

德州仪器

INA592IDRCR

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.33177 Mbytes Page：45 Pages

TI

德州仪器

INA592IDRCT

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.5537 Mbytes Page：48 Pages

TI

德州仪器

INA592IDT

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.5537 Mbytes Page：48 Pages

TI

德州仪器

INA592IDT

INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.32222 Mbytes Page：45 Pages

TI

德州仪器

592D

Solid Tantalum Chip Capacitors TANTAMOUNT, Low Profile, Conformal Coated, Maximum CV

FEATURES • New robust ratings for pulsed applications • 1.0 mm to 2.5 mm height • Terminations: 100 matte tin (2) standard, tin / lead available • Mounting: surface mount • 8 mm, 12 mm tape and reel packaging available per EIA 481 and reeling per IEC 60286-3     7 [178 mm] standard    

VishayVishay Siliconix

威世威世科技公司

AD592

Low Cost, Precision IC Temperature Transducer

PRODUCT DESCRIPTION The AD592 is a two terminal monolithic integrated circuit temperature transducer that provides an output current proportional to absolute temperature. For a wide range of supply voltages the transducer acts as a high impedance temperature dependent current source of 1 µA/K. Im

AD

亚德诺

592D

Solid Tantalum Chip Capacitors TANTAMOUNT® , Low Profile, Conformal Coated, Maximum CV

文件：142.65 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

592D

Solid Tantalum Chip Capacitors

文件：335.64 Kbytes Page：25 Pages

VishayVishay Siliconix

威世威世科技公司

592W

Solid Tantalum Chip Capacitors

文件：257.49 Kbytes Page：15 Pages

VishayVishay Siliconix

威世威世科技公司

INA592供应商更多...

更新时间：2025-12-26 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
INA592IDGKR
TI(德州仪器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市威雅利发展有限公司
INA592IDR
TI
21+
SOIC-8
5993
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科恒伟业电子有限公司
INA592IDGKR
TI
24+
VSSOP8
8500
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市正纳电子有限公司
INA592IDGKR
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
询价
深圳市煦洪科技有限公司
INA592IDGKR
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源！
询价
深圳诚思涵科技有限公司
INA592IDGKR
TI/德州仪器
23+
VSSOP-8
5000
只有原装,欢迎来电咨询!
询价
深圳市祥瑞智科技有限公司
INA592IDRCR
TI
25+
VSON10
2500
原厂原装,价格优势
询价
讯运(深圳/上海)电子有限公司
INA592IDGKT
TI(德州仪器)
2021+
VSSOP-8
499
询价
深圳市高捷芯城科技有限公司
INA592IDT
TI(德州仪器)
24+
SOP-8
7969
支持大陆交货,美金交易。原装现货库存。
询价
深圳市中联芯电子有限公司
INA592IDGKR
TI进口
24+
VSSOP8
9000
只做原装正品 有挂有货 假一赔十
询价

INA592芯片相关品牌

INA592规格书下载地址

INA592参数引脚图相关

INA592数据表相关新闻

DdatasheetPDF页码索引

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