| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INA592IDR | INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier 1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie | TI 德州仪器 |   | |
INA592IDR | INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：2.80737 Mbytes Page：44 Pages | TI 德州仪器 | | |
INA592IDR | INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.33177 Mbytes Page：45 Pages | TI 德州仪器 | | |
INA592IDR | INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.32222 Mbytes Page：45 Pages | TI 德州仪器 | | |
INA592IDR | INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.5537 Mbytes Page：48 Pages | TI 德州仪器 | | |
INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier 1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier 1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier 1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier 1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier 1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier 1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier 1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.5537 Mbytes Page：48 Pages | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.32222 Mbytes Page：45 Pages | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.33177 Mbytes Page：45 Pages | TI 德州仪器 | | ||
INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier 文件：3.5537 Mbytes Page：48 Pages | TI 德州仪器 | | ||
Solid Tantalum Chip Capacitors TANTAMOUNT, Low Profile, Conformal Coated, Maximum CV FEATURES • New robust ratings for pulsed applications • 1.0 mm to 2.5 mm height • Terminations: 100 matte tin (2) standard, tin / lead available • Mounting: surface mount • 8 mm, 12 mm tape and reel packaging available per EIA 481 and reeling per IEC 60286-3 7 [178 mm] standard | VishayVishay Siliconix 威世威世科技公司 | | ||
Low Cost, Precision IC Temperature Transducer PRODUCT DESCRIPTION The AD592 is a two terminal monolithic integrated circuit temperature transducer that provides an output current proportional to absolute temperature. For a wide range of supply voltages the transducer acts as a high impedance temperature dependent current source of 1 µA/K. Im | AD 亚德诺 | | ||
Solid Tantalum Chip Capacitors TANTAMOUNT® , Low Profile, Conformal Coated, Maximum CV 文件：142.65 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Solid Tantalum Chip Capacitors 文件：335.64 Kbytes Page：25 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Solid Tantalum Chip Capacitors 文件：257.49 Kbytes Page：15 Pages | VishayVishay Siliconix 威世威世科技公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
TI(德州仪器) |
24+ |
VSON10(3x3) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
|||
Texas |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
TI |
25+ |
VSON10 |
2500 |
原厂原装,价格优势 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
||||
TI |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
TI/德州仪器 |
22+ |
VSON-10 |
6000 |
原装正品现货 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI(德州仪器) |
25+ |
SOIC-8 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
INA592IDR芯片相关品牌
INA592IDR规格书下载地址
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