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INA149AID价格
参考价格：￥26.5592
型号：INA149AID 品牌：Texas 备注：这里有INA149AID多少钱，2026年最近7天走势，今日出价，今日竞价，INA149AID批发/采购报价，INA149AID行情走势销售排行榜，INA149AID报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INA149AID | 丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier 1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001 | TI 德州仪器 |   | |
INA149AID | High Common-Mode Voltage Difference Amplifier 文件：1.78783 Mbytes Page：24 Pages | TI 德州仪器 | | |
INA149AID | High Common-Mode Voltage Difference Amplifier 文件：1.78783 Mbytes Page：24 Pages | TI 德州仪器 | | |
INA149AID | High Common-Mode Voltage Difference Amplifier 文件：1.78783 Mbytes Page：24 Pages | TI 德州仪器 | | |
INA149AID | High Common-Mode Voltage Difference Amplifier 文件：1.78783 Mbytes Page：24 Pages | TI 德州仪器 | | |
丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier 1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001 | TI 德州仪器 | | ||
丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier 1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001 | TI 德州仪器 | | ||
丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier 1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001 | TI 德州仪器 | | ||
丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier 1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001 | TI 德州仪器 | | ||
丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier 1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001 | TI 德州仪器 | | ||
High Common-Mode Voltage Difference Amplifier 文件：1.78783 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Common-Mode Voltage Difference Amplifier 文件：1.78783 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Common-Mode Voltage Difference Amplifier 文件：1.78783 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Common-Mode Voltage Difference Amplifier 文件：1.78783 Mbytes Page：24 Pages | TI 德州仪器 | | ||
PNP 5 GHz wideband transistor DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology. | PHILIPS 飞利浦 | | ||
Thyristors logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger | PHILIPS 飞利浦 | | ||
Thyristors logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger | PHILIPS 飞利浦 | | ||
Thyristors logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger | PHILIPS 飞利浦 | | ||
Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5) 文件：388.73 Kbytes Page：15 Pages | NSC 国半 | |
INA149AID产品属性
- 类型
描述
- 型号
INA149AID
- 功能描述
差分放大器 High Common Mode Vltg Diff Amp
- RoHS
否
- 制造商
Texas Instruments
- 通道数量
1 Channel
- 带宽
2.4 GHz
- 可用增益调整
6 dB to 26 dB
- 共模抑制比（最小值）
- 40 dB
- 工作电源电压
4.75 V to 5.25 V
- 电源电流
100 mA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
WQFN-24
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
23+ |
SOIC-8 |
30000 |
全新原装正品 |
|||
TI |
23+ |
NA |
4500 |
原装现货,实单价格可谈 |
|||
TI |
23+ |
SOP-8 |
30000 |
进口原装现货 假一罚十 特价销售 |
|||
TI |
23+ |
SOP8 |
17689 |
全新原装假一赔十 |
|||
TI/德州仪器 |
25+ |
LQFP |
32000 |
TI/德州仪器全新特价INA149AIDR即刻询购立享优惠#长期有货 |
|||
TI |
21+ |
SOIC-8 |
2025 |
全新原装公司现货
|
|||
TI(德州仪器) |
24+ |
SOIC-8_150mil |
6200 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
TI |
21+ |
SOP8 |
2863 |
十年信誉,只做原装,有挂就有现货! |
|||
TI |
2540+ |
SOP8 |
9854 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TI |
24+ |
SOIC-8 |
30000 |
专业代理销售芯片 授权分销全系列产品 |
INA149AID规格书下载地址
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INA149AID数据表相关新闻
INA146UA/2K5
INA146UA/2K5
2024-1-18INA148UA/2K5
原装代理
2023-7-29INA146UA/2K5
进口代理
2022-11-18INA149AID
公司原装正品 现货库存 价格优势
2022-4-21INA157U
属性 参数值 商品目录 差分运放 增益带宽积（GBP） 4MHz(-3dB) 放大器组数 1 输出类型 - 运放类型 Differential 各通道功耗 - 压摆率（SR） 14 V/us 工作温度 -40°C ~ 85°C 电源电压 8V ~ 36V， ±4V ~ 18V
2020-10-21INA152EA/2K5
4 Channel 差分放大器 , + 210 C 差分放大器 , ADA4937-2 差分放大器 , SO-8 1 Channel 36 V 2.4 V 差分放大器 , MSOP-16 差分放大器 , DFN-10 差分放大器
2020-7-13
DdatasheetPDF页码索引
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