丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier

1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001

High Common-Mode Voltage Difference Amplifier

文件：1.78783 Mbytes Page：24 Pages

High Common-Mode Voltage Difference Amplifier

文件：1.78783 Mbytes Page：24 Pages

High Common-Mode Voltage Difference Amplifier

文件：1.78783 Mbytes Page：24 Pages

High Common-Mode Voltage Difference Amplifier

文件：1.78783 Mbytes Page：24 Pages

丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier

1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001

丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier

1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001

丝印代码：INA149A；High Common-Mode Voltage Difference Amplifier

1FEATURES 2• Common-Mode Voltage Range: ±275 V • Minimum CMRR: 90 dB from –40°C to +125°C • DC Specifications: – Maximum Offset Voltage: 1100 μV – Maximum Offset Voltage Drift: 15 μV/°C – Maximum Gain Error: 0.02% – Maximum Gain Error Drift: 10 ppm/°C – Maximum Gain Nonlinearity: 0.001

PNP 5 GHz wideband transistor

DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology.

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes Page：15 Pages