FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件：884.48 Kbytes Page：20 Pages

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件：220.25 Kbytes Page：12 Pages

丝印代码：INA121PA；FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

丝印代码：INA121PA；FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

丝印代码：INA121PA；FET-Input, Low Power INSTRUMENTATION AMPLIFIER

FEATURES LOW BIAS CURRENT: ±4pA LOW QUIESCENT CURRENT: ±450mA LOW INPUT OFFSET VOLTAGE: ±200mV LOW INPUT OFFSET DRIFT: ±2mV/°C LOW INPUT NOISE: 20nV/ÖHz at f = 1kHz (G =100) HIGH CMR: 106dB WIDE SUPPLY RANGE: ±2.25V to ±18V LOW NONLINEARITY ERROR: 0.001% max INPUT PROTECTION TO ±40V

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件：884.48 Kbytes Page：20 Pages

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件：220.25 Kbytes Page：12 Pages

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件：884.48 Kbytes Page：20 Pages

FET-Input, Low Power INSTRUMENTATION AMPLIFIER

文件：884.48 Kbytes Page：20 Pages

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

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Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

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Silicon NPN epitaxial planer transistor

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