位置：首页 > IC中文资料 > IMBF170R450M1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IMBF170R450M1 | CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.28072 Mbytes Page：16 Pages | Infineon 英飞凌 |   | |
IMBF170R450M1 | CoolSiC ™ 1700 V SiC 沟槽MOSFET，采用TO-263-7封装 | Infineon 英飞凌 | | |
CoolSiC™ 1700 V SiC Trench MOSFET Features • VDSS = 1700 V at Tvj = 25°C • IDDC = 10 A at TC = 25°C • RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C • Optimized for fly-back topologies • 12 V / 0 V gate-source voltage compatible with most fly-back controllers • Very low switching losses • Benchmark gate threshold voltage, VGS(t | Infineon 英飞凌 | |
更新时间：2026-1-1 23:01:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO263-7 |
2524 |
原厂直供,支持账期,免费供样,技术支持 |
|||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
22+ |
TO263-7 |
1000 |
22+ |
|||
INFINEON |
24+ |
TO263-7 |
15000 |
原装原标原盒 给价就出 全网最低 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON/英飞凌 |
24+ |
TO263-7 |
5000 |
全新原装正品,现货销售 |
|||
INFINEON/英飞凌 |
23+ |
TO263-7 |
20000 |
||||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
INFINEON |
23+ |
N/A |
7000 |
||||
INFINEON |
23+ |
TO263-7 |
6740 |
专注配单,只做原装进口现货 |
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