IHW15N120价格

参考价格:¥10.0416

型号:IHW15N120R3 品牌:INFINEON 备注:这里有IHW15N120多少钱,2025年最近7天走势,今日出价,今日竞价,IHW15N120批发/采购报价,IHW15N120行情走势销售排行榜,IHW15N120报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Reverse Conducting IGBT with monolithic body diode

Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high rugg

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

Infineon

英飞凌

Reverse Conducting IGBT with monolithic body diode

Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, te

Infineon

英飞凌

Reverse conducting IGBT with monolithic body diode

Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TRENCHSTOP™ technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capabilit

Infineon

英飞凌

Reverse conducting IGBT with monolithic body Diode for soft-switching

文件:1.90384 Mbytes Page:14 Pages

Infineon

英飞凌

Reverse conducting IGBT with monolithic body Diode for soft-switching

文件:1.90384 Mbytes Page:14 Pages

Infineon

英飞凌

Reverse conducting IGBT with monolithic body Diode for soft-switching

文件:1.90384 Mbytes Page:14 Pages

Infineon

英飞凌

Reverse Conducting IGBT with monolithic body diode

Infineon

英飞凌

Reverse Conducting IGBT with monolithic body diode

Infineon

英飞凌

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1200V 30A 357W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

1200 V IGBT with anti-parallel diode in TO-247 package

Infineon

英飞凌

Material Content Data Sheet

文件:33.12 Kbytes Page:1 Pages

Infineon

英飞凌

Material Content Data Sheet

文件:33.12 Kbytes Page:1 Pages

Infineon

英飞凌

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1200V 30A 254W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

High ruggedness, temperature stable behavior

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness,

DINTEK

尚鼎芯

Soft current turn-off waveforms

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior

DINTEK

尚鼎芯

Soft current turn-off waveforms

General Description Din-Tek IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·E

DINTEK

尚鼎芯

IGBT

General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

Fairchild

仙童半导体

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件:1.36019 Mbytes Page:9 Pages

FOSHAN

蓝箭电子

IHW15N120产品属性

  • 类型

    描述

  • 型号

    IHW15N120

  • 功能描述

    IGBT 晶体管 REVERSE CONDUCT IGBT 1200V 15A

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-12-29 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-247
928
原厂订货渠道,支持BOM配单一站式服务
MAX
23+
DIP
6500
全新原装假一赔十
INFINEON/英飞凌
25+
TO-247
32360
INFINEON/英飞凌全新特价IHW15N120R3即刻询购立享优惠#长期有货
INFINEON/英飞凌
22+
TO-3P
100000
代理渠道/只做原装/可含税
INF
16+
TO-247
1600
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON
24+
SMD
6850
只做原装正品现货或订货假一赔十!
INFINEON
23+24
TO-247
49820
主营全系列二三极管、MOS场效应管、
INFINEON
23+
SIP
20500
H15R1203 IGBT 沟道 1200 V 30 A 254 W .单片体二极管的反向导通IGBT
英飞凌
23+
TO-247
17134
##公司主营品牌长期供应100%原装现货可含税提供技术
Infineon(英飞凌)
24+
TO-247-3
7148
原厂可订货,技术支持,直接渠道。可签保供合同

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