位置：首页 > IC中文资料 > IGLT65R025D2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IGLT65R025D2 | CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency | Infineon 英飞凌 |   | |
IGLT65R025D2 | CoolGaN™ Transistor 650 V G5 Features • Enhancement mode transistor • Ultra‑fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate and output charge • Superior commutation ruggedness • 2 kV HBM ESD standards Potential applications Industrial, telecom, datacenter SMPS based on half‑br | Infineon 英飞凌 | | |
IGLT65R025D2 | CoolGaN ™晶体管 650 V G5 | Infineon 英飞凌 | | |
CoolGaN™ Transistor 650 V G5 Features • Enhancement mode transistor • Ultra‑fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate and output charge • Superior commutation ruggedness • 2 kV HBM ESD standards Potential applications Industrial, telecom, datacenter SMPS based on half‑br | Infineon 英飞凌 | | ||
CoolGaN™ Transistor 650 V G5 Features • Enhancement mode transistor • Ultra‑fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate and output charge • Superior commutation ruggedness • 2 kV HBM ESD standards Potential applications Industrial, telecom, datacenter SMPS based on half‑br | Infineon 英飞凌 | | ||
CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency | Infineon 英飞凌 | | ||
CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
TDK |
NEW |
原厂封装 |
12379 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
Infineon/英飞凌 |
24+ |
PG-DSO-20 |
30000 |
原装正品公司现货,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-DSO-20 |
6820 |
只做原装,质量保证 |
|||
SHARP |
24+ |
SIP |
90000 |
一级代理商进口原装现货、价格合理 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
FDK |
24+ |
1300 |
现货 |
||||
Infineon/英飞凌 |
23+ |
PG-DSO-20 |
12700 |
买原装认准中赛美 |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
Infineon/英飞凌 |
2021+ |
PG-DSO-20 |
9600 |
原装现货，欢迎询价 |
IGLT65R025D2规格书下载地址
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DdatasheetPDF页码索引
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