Low Loss IGBT in Trench and Fieldstop technology

• Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution

Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

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600 V、15 A IGBT 分立器件，采用 TO263 封装

Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

文件：688.45 Kbytes Page：12 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 30A 130W TO263-3-2 分立半导体产品 晶体管 - UGBT、MOSFET - 单

15 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

N-Channel 650V (D-S) Power MOSFET

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15A, 600V N-CHANNEL POWER MOSFET

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High Switching Speed

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CoolMOS Power Transistor

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