FAST CMOS 16-BIT REGISTER (3-STATE)

DESCRIPTION: The FCT16374T/AT/CT/ET and FCT162374T/AT/CT/ET 16-bit edge-triggered D-type registers are built using advanced dual metal CMOS technology. These high-speed, low-power registers are ideal for use as buffer registers for data synchronization and storage. The Output Enable (xOE) and c

FAST CMOS 16-BIT REGISTER (3-STATE)

DESCRIPTION: The FCT16374T/AT/CT/ET and FCT162374T/AT/CT/ET 16-bit edge-triggered D-type registers are built using advanced dual metal CMOS technology. These high-speed, low-power registers are ideal for use as buffer registers for data synchronization and storage. The Output Enable (xOE) and c

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig

FAST CMOS 16-BIT REGISTER (3-STATE)

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10 • Hig