位置:首页 > IC中文资料第411页 > IDT72021
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT72021 | CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | ||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 DESCRIPTION: IDT72021/031/041s are high-speed, low-power, dual-port memory devices commonly known as FIFOs (First-In/First Out). Data can be written into and read from the memory at independent rates. The order of information stored and extracted does not change, but the rate of data entering the | IDT | |||
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9 | RENESAS 瑞萨 | |||
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES • LITTLE FOOT® Plus Schottky • Si4830DY Pin Compatible • PWM Optimized • 100 Rg Tested APPLICATIONS • Asymmetrical Buck-Boost DC/DC Converter | VishayVishay Siliconix 威世威世科技公司 |
IDT72021产品属性
- 类型
描述
- 型号
IDT72021
- 制造商
Integrated Device Technology Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
22+ |
PLCC |
6000 |
十年配单,只做原装 |
|||
IDT |
24+ |
PLCC32 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IDT |
BGAQFP |
488 |
原盒原包装只有原装假一罚十价优! |
||||
IDT |
23+ |
DIP32 |
50000 |
全新原装正品现货,支持订货 |
|||
IDT |
25+ |
65248 |
百分百原装现货 实单必成 |
||||
IDT |
22+ |
PLCC |
20000 |
公司只做原装 品质保障 |
|||
IDT |
23+ |
PLCC32 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IDT |
22+ |
PLCC |
5000 |
全新原装现货!自家库存! |
|||
IDT |
24+ |
LCC |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IDT |
92+ |
DIP32 |
283 |
原装现货 |
IDT72021规格书下载地址
IDT72021参数引脚图相关
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DdatasheetPDF页码索引
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