型号 功能描述 生产厂家 企业 LOGO 操作

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

IDT71V67903S75BQGI产品属性

  • 类型

    描述

  • 型号

    IDT71V67903S75BQGI

  • 制造商

    Integrated Device Technology Inc

  • 功能描述

    IC SRAM 9MBIT 7.5NS 165CABGA

更新时间:2025-11-22 23:00:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
24+
CABGA165(13x15)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
Renesas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
RENESAS(瑞萨)/IDT
2447
CABGA-165(13x15)
315000
2000个/圆盘一级代理专营品牌!原装正品,优势现货,
IDT, Integrated Device Technol
21+
80-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一级代理/放心采购
RENESAS(瑞萨)/IDT
2021+
CABGA-165(13x15)
499
Renesas Electronics America In
25+
165-TBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IDT
25+
BGA-165
136
就找我吧!--邀您体验愉快问购元件!

IDT71V67903S75BQGI芯片相关品牌

IDT71V67903S75BQGI数据表相关新闻