型号 功能描述 生产厂家 企业 LOGO 操作
IDT71V67703S85BQI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

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IDT

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c

RENESAS

瑞萨

IDT71V67703S85BQI产品属性

  • 类型

    描述

  • 型号

    IDT71V67703S85BQI

  • 功能描述

    IC SRAM 9MBIT 85NS 165FBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    72

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步

  • 存储容量

    9M(256K x 36)

  • 速度

    75ns

  • 接口

    并联

  • 电源电压

    3.135 V ~ 3.465 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    100-LQFP

  • 供应商设备封装

    100-TQFP(14x14)

  • 包装

    托盘

  • 其它名称

    71V67703S75PFGI

更新时间:2026-3-1 18:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Renesas Electronics Corporatio
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
IDT
25+
BGA
880000
明嘉莱只做原装正品现货
IDT
2025+
BGA
3000
原装进口价格优 请找坤融电子!
IDT
0527+
BGA
43
原装现货
IDT
20+
BGA
19570
原装优势主营型号-可开原型号增税票
IDT
26+
165FPBGA
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IDT
23+
BGA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IDT
23+
165-CABGA(13x15)
3200
专业分销产品!原装正品!价格优势!
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
IDT
22+
165CABGA (13x15)
9000
原厂渠道,现货配单

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