位置：首页 > IC中文资料第5858页 > IDT71V67703S80BQ
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V67703S80BQ | 256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect 文件：975.41 Kbytes Page：23 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect 文件：975.41 Kbytes Page：23 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V67703S80BQ产品属性
- 类型
描述
- 型号
IDT71V67703S80BQ
- 功能描述
IC SRAM 9MBIT 80NS 165FBGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
72
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步
- 存储容量
9M（256K x 36）
- 速度
75ns
- 接口
并联
- 电源电压
3.135 V ~ 3.465 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
71V67703S75PFGI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
2021+ |
1931 |
只做原装假一罚十 |
||||
IDT |
23+ |
165-CABGA(13x15) |
73390 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
23+ |
165FPBGA |
9526 |
||||
IDT-INTE |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
||||
IDT |
22+ |
165CABGA (13x15) |
9000 |
原厂渠道,现货配单 |
|||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
||||
IDT-INTE |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
||||
IDT |
23+ |
TQFP |
8230 |
全新原装真实库存含13点增值税票! |
|||
IDT |
23+ |
165CABGA (13x15) |
9000 |
原装正品，支持实单 |
|||
IDT |
23+ |
165-FBGA |
5934 |
原装现货 |
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IDT71V67703S80BQ规格书下载地址
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DdatasheetPDF页码索引
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