位置：首页 > IC中文资料第6983页 > IDT71V67703S75PF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V67703S75PF | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：975.41 Kbytes Page：23 Pages | IDT |   | |
IDT71V67703S75PF | 封装/外壳：100-LQFP 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
封装/外壳：100-LQFP 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：975.41 Kbytes Page：23 Pages | IDT | | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c | RENESAS 瑞萨 | | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c | RENESAS 瑞萨 | | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c | RENESAS 瑞萨 | | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c | RENESAS 瑞萨 | | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c | RENESAS 瑞萨 | |
IDT71V67703S75PF产品属性
- 类型
描述
- 型号
IDT71V67703S75PF
- 功能描述
IC SRAM 9MBIT 75NS 100TQFP
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
576
- 系列
- 格式 -
- 存储器
闪存
- 存储器类型
闪存 - NAND
- 存储容量
512M（64M x 8）
- 速度
-
- 接口
并联
- 电源电压
2.7 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-TFSOP（0.724，18.40mm 宽）
- 供应商设备封装
48-TSOP
- 包装
托盘
- 其它名称
497-5040
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
24+ |
QFP100 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IDT |
24+ |
NA/ |
3342 |
原装现货,当天可交货,原型号开票 |
|||
IDT |
2023+ |
QFP100 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
IDT |
25+ |
QFP100 |
860000 |
明嘉莱只做原装正品现货 |
|||
IDT |
21+ |
QFP100 |
1625 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
INTEGRATEDDE |
23+ |
65480 |
|||||
IDT |
06+ |
QFP100 |
250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IDT |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IDT |
NEW |
100TQFP |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IDT |
23+ |
QFP-100P |
50000 |
全新原装正品现货,支持订货 |
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