位置：首页 > IC中文资料第6688页 > IDT71V65703S85BGI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V65703S85BGI | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 文件：504.78 Kbytes Page：26 Pages | IDT |   | |
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | |
IDT71V65703S85BGI产品属性
- 类型
描述
- 型号
IDT71V65703S85BGI
- 功能描述
IC SRAM 9MBIT 85NS 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
45
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 双端口，异步
- 存储容量
128K（8K x 16）
- 速度
15ns
- 接口
并联
- 电源电压
3 V ~ 3.6 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
70V25S15PF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas Electronics Corporatio |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
IDT |
22+ |
BGA |
5000 |
全新原装现货!自家库存! |
|||
恩XP |
23+ |
QFP |
7000 |
||||
IDT |
22+ |
QFP |
20000 |
公司只做原装 品质保障 |
|||
IDT |
1923+ |
BGAQFP |
1680 |
只做进口原装!假一罚十!绝对有货! |
|||
IDT |
0608+ |
QFP |
258 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IDT |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IDT |
26+ |
165BGA |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IDT |
23+ |
QFP |
50000 |
全新原装正品现货,支持订货 |
|||
IDT |
23+ |
119-PBGA(14x22) |
9000 |
专业分销产品!原装正品!价格优势! |
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IDT71V65703S85BGI规格书下载地址
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DdatasheetPDF页码索引
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