位置：首页 > IC中文资料第5183页 > IDT71V65603S133BGGI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V65603S133BGGI产品属性
- 类型
描述
- 型号
IDT71V65603S133BGGI
- 功能描述
IC SRAM 9MBIT 133MHZ 119BGA
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
45
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 双端口，异步
- 存储容量
128K（8K x 16）
- 速度
15ns
- 接口
并联
- 电源电压
3 V ~ 3.6 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
70V25S15PF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
|||
IDT, Integrated Device Technol |
21+ |
119-PBGA(14x22) |
56200 |
一级代理/放心采购 |
|||
优势渠道 |
22+ |
25000 |
原装现货,价格优惠,假一罚十 |
||||
IDT, Integrated Device Technol |
21+ |
NA |
11200 |
正品专卖,进口原装深圳现货 |
|||
Renesas |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
优势渠道 |
2023+ |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
||||
RENESAS(瑞萨) |
23+ |
119-PBGA (14.00L X 22.00W X 1. |
10000 |
全新、原装 |
|||
RENESAS(瑞萨)/IDT |
23+ |
PBGA119(14x22) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
优势渠道 |
2028+ |
952 |
全新原装 实单必成 |
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IDT71V65603S133BGGI规格书下载地址
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DdatasheetPDF页码索引
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