位置：首页 > IC中文资料第2043页 > IDT71V424L12YG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V424L12YG | 3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | |
IDT71V424L12YG产品属性
- 类型
描述
- 型号
IDT71V424L12YG
- 功能描述
IC SRAM 4MBIT 12NS 36SOJ
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
2,000
- 系列
MoBL® 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 异步
- 存储容量
16M（2M x 8，1M x 16）
- 速度
45ns
- 接口
并联
- 电源电压
2.2 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-VFBGA
- 供应商设备封装
48-VFBGA（6x8）
- 包装
带卷(TR)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
36SOJ |
9000 |
原装正品，支持实单 |
|||
IDT |
20+/21+ |
PGA |
5600 |
全新原装进口价格优惠 |
|||
IDT |
2020+ |
SOJ |
2106 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IDT |
21+ |
36SOJ |
13880 |
公司只售原装,支持实单 |
|||
IDT |
2021+ |
SOJ |
7106 |
原装正品假一罚十 |
|||
IDT |
23+ |
36-SOJ |
24840 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
07+ |
SOJ36 |
480 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IDT |
21+ROHS |
SOJ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IDT |
21+ |
SOJ |
6880 |
只做原装 |
|||
IDT |
22+/23+ |
SOJ |
9800 |
原装进口公司现货假一赔百 |
IDT71V424L12YG芯片相关品牌
IDT71V424L12YG规格书下载地址
IDT71V424L12YG参数引脚图相关
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DdatasheetPDF页码索引
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