位置：首页 > IC中文资料第4679页 > IDT71V424L10YI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V424L10YI | 3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDT Integrated Device Technology, Inc. |  |   |
IDT71V424L10YI | 封装/外壳：36-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 4MBIT PARALLEL 36SOJ 集成电路（IC） 存储器 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | |
封装/外壳：36-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 4MBIT PARALLEL 36SOJ 集成电路（IC） 存储器 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDT Integrated Device Technology, Inc. | | | |
3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDT Integrated Device Technology, Inc. | | | |
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDT Integrated Device Technology, Inc. | | |
IDT71V424L10YI产品属性
- 类型
描述
- 型号
IDT71V424L10YI
- 功能描述
IC SRAM 4MBIT 10NS 36SOJ
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
576
- 系列
- 格式 -
- 存储器
闪存
- 存储器类型
闪存 - NAND
- 存储容量
512M（64M x 8）
- 速度
-
- 接口
并联
- 电源电压
2.7 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-TFSOP（0.724，18.40mm 宽）
- 供应商设备封装
48-TSOP
- 包装
托盘
- 其它名称
497-5040
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
22+ |
36SOJ |
9000 |
原厂渠道,现货配单 |
|||
Renesas Electronics Corporatio |
23+/24+ |
36-BSOJ |
8600 |
只供原装进口公司现货+可订货 |
|||
06/07+ |
SOP |
7003 |
|||||
IDT |
23+ |
36-SOJ |
71890 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
23+24 |
TSOP- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
IDT |
22+ |
TSOP44 |
9600 |
原装现货,优势供应,支持实单! |
|||
IDT |
22+ |
TSOP44 |
10000 |
原装正品优势现货供应 |
|||
IDT |
23+ |
44PINTSOPTYP |
9526 |
||||
IDT |
18+ |
TSOP44 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IDT, Integrated Device Techno |
23+ |
36-SOJ |
7300 |
专注配单,只做原装进口现货 |
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IDT71V424L10YI规格书下载地址
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DdatasheetPDF页码索引
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