型号 功能描述 生产厂家 企业 LOGO 操作

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件:288.96 Kbytes Page:22 Pages

IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件:220.08 Kbytes Page:18 Pages

IDT

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件:220.08 Kbytes Page:18 Pages

IDT

更新时间:2026-2-13 13:49:01
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